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N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube

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    Buy cheap N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube from wholesalers
     
    Buy cheap N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube from wholesalers
    • Buy cheap N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube from wholesalers
    • Buy cheap N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube from wholesalers
    • Buy cheap N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube from wholesalers
    • Buy cheap N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube from wholesalers

    N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube

    Ask Lasest Price
    Brand Name : juyi
    Model Number : JY8N5M
    Certification : ISO9001,CE
    Price : USD0.5-USD1/PC
    Payment Terms : T/T, , Western Union, Paypal
    Supply Ability : 10000pcs per month
    Delivery Time : depend on the order quantity /Negotiable
    • Product Details
    • Company Profile

    N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube

    General Description:


    The product utilizes the advanced planar processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
    device for use in power switching application and a wide variety of other applications.


    Features:


    ● 500V/8A, RDS(ON) =0.75Ω@VGS=10V(Typical)
    ●Fast switching and reverse body recovery
    ● Excellent package for good heat dissipation


    Applications:


    ● Lighting
    ● High efficiency switch mode power supplies


    PIN Description:


    Absolute Maximum Ratings(Tc=25℃ Unless Otherwise Noted):

    SymbolParameterRatingUnit
    VDSDrain-Source Voltage40V
    VGSGate-Source Voltage±30V
    IDContinuous Drain CurrentTc=25℃8A
    Tc=100℃4.8
    IDMPulsed Drain Current30A
    PDMaximum Power Dissipation80W
    TJTSTGOperating Junction and Storage Temperature Range-55~+150
    RΘJCThermal Resistance-Junction to Case1.56℃/W

    TO-252 Package Outline:


    SymbolDimensions in MillimetersDimensions in inches
    Min.Max.Min.Max.
    A2.2002.4000.0870.094
    A10.0000.1270.0000.005
    b0.6600.8600.0260.034
    c0.4600.5800.0180.023
    D6.5006.7000.2560.264
    D15.1005.4600.2010.215
    D20.483TYP.0.190 TYP.
    E6.0006.20000.2360.244
    e2.1862.3860.0860.094
    L9.80010.4000.3860.409
    L12.900 TYP0.114 TYP.
    L21.4001.7000.0550.067
    L31.600 TYP0.063 TYP.
    L40.6001.0000.0240.039
    ø1.1001.3000.0430.051
    Θ
    h0.0000.3000.0000.012
    v5.350 TYP.0.211 TYP.


    For More products information, please directly contact with us via email: ivanzhu@junqitrading.com

    Quality N Channel Enhancement Mode Power MOSFET JY8N5M TO252 High Power 500V 4A Field-effect Tube for sale
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